 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| a FEATURES +1.8 V to +5.5 V Single Supply 2.5 (Typ) On Resistance Low On-Resistance Flatness -3 dB Bandwidth >200 MHz Rail-to-Rail Operation 10-Lead SOIC Package Fast Switching Times tON 16 ns tOFF 8 ns Typical Power Consumption (<0.01 TTL/CMOS Compatible APPLICATIONS Battery Powered Systems Communication Systems Sample-and-Hold Systems Audio Signal Routing Audio and Video Switching Mechanical Reed Relay Replacement Low Voltage 4 CMOS Dual SPDT Switch ADG736 ADG736 FUNCTIONAL BLOCK DIAGRAM S1A S1B IN1 S2A D1 W) S2B IN2 D2 SWITCHES SHOWN FOR A LOGIC "1" INPUT GENERAL DESCRIPTION PRODUCT HIGHLIGHTS The ADG736 is a monolithic device comprising two independently selectable CMOS SPDT switches. These switches are designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, low leakage currents and wide input signal bandwidth. The on resistance profile is very flat over the full analog signal range. This ensures excellent linearity and low distortion when switching audio signals. Fast switching speed also makes the part suitable for video signal switching. The ADG736 can operate from a single +1.8 V to +5.5 V supply, making it ideally suited to portable and battery powered instruments. Each switch conducts equally well in both directions when on and has an input signal range that extends to the power supplies. The ADG736 exhibits break-before-make switching action. The ADG736 is available in a 10-lead SOIC package. 1. +1.8 V to +5.5 V Single Supply Operation. The ADG736 offers high performance, including low on resistance and fast switching times and is fully specified and guaranteed with +3 V and +5 V supply rails. 2. Very Low RON (4.5 Max at 5 V, 8 Max at 3 V). At supply voltage of +1.8 V, RON is typically 35 over the temperature range. 3. Low On-Resistance Flatness. 4. -3 dB Bandwidth >200 MHz. 5. Low Power Dissipation. CMOS construction ensures low power dissipation. 6. Fast tON/tOFF. 7. Break-Before-Make Switching Action. 8. 10-Lead SOIC Package. REV. 0 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 (c) Analog Devices, Inc., 1998 ADG736-SPECIFICATIONS1 (V = +5 V noted.) DD 10%, GND = 0 V. All Specifications -40 C to +85 C, unless otherwise Parameter ANALOG SWITCH Analog Signal Range On-Resistance (RON) On-Resistance Match Between Channels (RON) On-Resistance Flatness (RFLAT(ON)) LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Channel ON Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH DYNAMIC CHARACTERISTICS2 tON tOFF Break-Before-Make Time Delay, tD Off Isolation B Version -40 C to +25 C +85 C 0 V to VDD 2.5 4 4.5 0.1 0.4 0.5 1.2 0.01 0.1 0.01 0.1 Units V typ max typ max typ max nA typ nA max nA typ nA max V min V max A typ A max ns typ ns max ns typ ns max ns typ ns min dB typ dB typ dB typ dB typ MHz typ pF typ pF typ Test Conditions/Comments VS = 0 V to VDD, IDS = -10 mA; Test Circuit 1 VS = 0 V to VDD, IDS = -10 mA VS = 0 V to VDD, IDS = -10 mA VDD = +5.5 V VS = 4.5 V/1 V, VD = 1 V/4.5 V; Test Circuit 2 VS = VD = 1 V or 4.5 V; Test Circuit 3 0.3 0.3 2.4 0.8 0.005 0.1 VIN = VINL or VINH 12 16 5 8 7 1 -62 -82 -62 -82 200 9 32 Channel-to-Channel Crosstalk Bandwidth -3 dB CS (OFF) CD, CS (ON) POWER REQUIREMENTS IDD RL = 300 , CL = 35 pF VS = 3 V, Test Circuit 4 RL = 300 , CL = 35 pF VS = 3 V, Test Circuit 4 RL = 300 , CL = 35 pF VS1 = VS2 = 3 V, Test Circuit 5 RL = 50 , CL = 5 pF, f = 10 MHz RL = 50 , CL = 5 pF, f = 1 MHz; Test Circuit 6 RL = 50 , CL = 5 pF, f = 10 MHz RL = 50 , CL = 5 pF, f = 1 MHz; Test Circuit 7 RL = 50 , CL = 5 pF; Test Circuit 8 0.001 1.0 A typ A max VDD = +5.5 V Digital Inputs = 0 V or 5 V NOTES 1 Temperature ranges are as follows: B Version: -40C to +85C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice. -2- REV. 0 ADG736 SPECIFICATIONS1 (V Parameter ANALOG SWITCH Analog Signal Range On-Resistance (RON) On-Resistance Match Between Channels (RON) DD = +3 V 10%, GND = 0 V. All Specifications -40 C to +85 C, unless otherwise noted.) B Version -40 C to +25 C +85 C 0 V to VDD 5.5 8 Units V typ max typ max typ nA typ nA max nA typ nA max V min V max A typ A max ns typ ns max ns typ ns max ns typ ns min dB typ dB typ dB typ dB typ MHz typ pF typ pF typ Test Conditions/Comments 5 VS = 0 V to VDD, IDS = -10 mA; Test Circuit 1 VS = 0 V to VDD, IDS = -10 mA VS = 0 V to VDD, IDS = -10 mA VDD = +3.3 V VS = 3 V/1 V, VD = 1 V/3 V; Test Circuit 2 VS = VD = 1 V or 3 V; Test Circuit 3 0.1 0.4 2.5 0.01 0.1 0.01 0.1 On-Resistance Flatness (RFLAT(ON)) LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Channel ON Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH DYNAMIC CHARACTERISTICS2 tON tOFF Break-Before-Make Time Delay, tD Off Isolation 0.3 0.3 2.0 0.4 0.005 0.1 VIN = VINL or VINH 14 20 6 10 7 1 -62 -82 -62 -82 200 9 32 Channel-to-Channel Crosstalk Bandwidth -3 dB CS (OFF) CD, CS (ON) POWER REQUIREMENTS IDD RL = 300 , CL = 35 pF VS = 2 V; Test Circuit 4 RL = 300 , CL = 35 pF VS = 2 V; Test Circuit 4 RL = 300 , CL = 35 pF VS1 = VS2 = 2 V; Test Circuit 5 RL = 50 , CL = 5 pF, f = 10 MHz RL = 50 , CL = 5 pF, f = 1 MHz; Test Circuit 6 RL = 50 , CL = 5 pF, f = 10 MHz RL = 50 , CL = 5 pF, f = 1 MHz; Test Circuit 7 RL = 50 , CL = 5 pF; Test Circuit 8 0.001 1.0 A typ A max VDD = +3.3 V Digital Inputs = 0 V or 3 V NOTES 1 Temperature ranges are as follows: B Version: -40C to +85C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice. REV. 0 -3- ADG736 ABSOLUTE MAXIMUM RATINGS 1 (TA = +25C unless otherwise noted) TERMINOLOGY VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 V to +6 V Analog, Digital Inputs2 . . . . . . . . . . . . -0.3 V to V DD +0.3 V or 30 mA, Whichever Occurs First Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA (Pulsed at 1 ms, 10% Duty Cycle Max) Operating Temperature Range Industrial (B Version) . . . . . . . . . . . . . . . . . -40C to +85C Storage Temperature Range . . . . . . . . . . . . . -65C to +150C Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +150C SOIC Package, Power Dissipation . . . . . . . . . . . . . . . 315 mW JA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 205C/W Lead Temperature, Soldering Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . +215C Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . +220C ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 kV NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time. 2 Overvoltages at IN, S or D will be clamped by internal diodes. Current should be limited to the maximum ratings given. VDD GND S D IN RON RON RFLAT(ON) IS (OFF) ID, IS (ON) VD (VS) CS (OFF) CD, CS (ON) tON tOFF tD ORDERING GUIDE Model ADG736BRM Temperature Range -40C to +85C Brand1 SAB Package Option2 RM-10 Crosstalk NOTES 1 Brand = Due to small package size, these three characters represent the part number. 2 RM = SOIC. Off Isolation Bandwidth On Response On Loss PIN CONFIGURATION (10-Lead SOIC) IN1 1 S1A 2 GND 3 10 D1 S1B Most positive power supply potential. Ground (0 V) reference. Source terminal. May be an input or output. Drain terminal. May be an input or output. Logic control input. Ohmic resistance between D and S. On resistance match between any two channels i.e., RONmax-RONmin. Flatness is defined as the difference between the maximum and minimum value of on resistance as measured over the specified analog signal range. Source leakage current with the switch "OFF." Channel leakage current with the switch "ON." Analog voltage on terminals D, S. "OFF" switch source capacitance. "ON" switch capacitance. Delay between applying the digital control input and the output switching on. See Test Circuit 4. Delay between applying the digital control input and the output switching off. "OFF" time or "ON" time measured between the 90% points of both switches, when switching from one address state to another. See Test Circuit 5. A measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance. A measure of unwanted signal coupling through an "OFF" switch. The frequency at which the output is attenuated by -3 dBs. The frequency response of the "ON" switch. The voltage drop across the "ON" switch, seen on the On Response versus frequency plot as how many dBs the signal is away from 0 dB at very low frequencies. Table I. Truth Table ADG736 9 TOP VIEW 8 VDD (Not to Scale) 7 S2B S2A 4 IN2 5 6 D2 Logic 0 1 Switch A OFF ON Switch B ON OFF CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADG736 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. WARNING! ESD SENSITIVE DEVICE -4- REV. 0 Typical Performance Characteristics-ADG736 6 5.5 5 4.5 4 3.5 RON - 3 2.5 2 1.5 1 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VD OR VS - DRAIN OR SOURCE VOLTAGE - Volts 5 1n 100 1k 10k 100k FREQUENCY - Hz 1M 10M VDD = +5V 100n 10n ISUPPLY - A VDD = +3V VDD = +4.5V 10 1 VDD = +2.7V 100 TA = +25 C 1m 10m VDD = +5V TA = +25 C Figure 1. On Resistance as a Function of VD (V S) Single Supplies Figure 4. Supply Current vs. Input Switching Frequency 6 5.5 5 4.5 4 3.5 RON - 3 2.5 2 1.5 1 0.5 0 0 0.5 1.5 2 2.5 1 VD OR VS - SOURCE OR DRAIN VOLTAGE - Volts 3 -40 C +25 C ON RESPONSE - dB +85 C VDD = +3V 0 VDD = +5V TA = +25 C -2 -4 -6 10k 100k 1M 10M FREQUENCY - HZ 100M Figure 2. On Resistance as a Function of VD (VS) for Different Temperatures VDD = 3 V Figure 5. On Response vs. Frequency 6 5.5 5 4.5 OFF ISOLATION - dB 4 3.5 RON - +25 C 3 2.5 2 1.5 1 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VD OR VS - DRAIN OR SOURCE VOLTAGE - Volts 5 +85 C VDD = +5V -30 -40 -50 -60 -70 -80 -90 -100 -110 -40 C -120 -130 10k 100k 1M 10M FREQUENCY - Hz 100M VDD = +5V, +3V TA = +25 C Figure 3. On Resistance as a Function of VD (VS) for Different Temperatures VDD = 5 V Figure 6. Off Isolation vs. Frequency REV. 0 -5- ADG736 -30 -40 -50 CROSSTALK - dB -60 -70 -80 -90 -100 -110 -120 -130 10k 100k 1M 10M FREQUENCY - HZ 100M VDD = +5V, +3V TA = +25 C Figure 7. Crosstalk vs. Frequency APPLICATIONS VDD V+ CH1 S1A D CH2 75 S1B A=2 RL 75 VOUT ADG736 75 IN1 250 250 75 Figure 8. Using the ADG736 to Select Between Two Video Signals -6- REV. 0 ADG736 Test Circuits IDS V1 IS (OFF) S VS RON = V1/IDS D VS A S D VD VS S D ID (ON) A VD Test Circuit 1. On Resistance VDD 0.1 F Test Circuit 2. Off Leakage Test Circuit 3. On Leakage VDD S VS IN GND D RL 300 CL 35pF VOUT VIN 50% VS 50% 90% VOUT 90% t ON t OFF Test Circuit 4. Switching Times VDD 0.1 F VDD VS SA SB D RL 300 GND CL 35pF VOUT VIN VS VOUT 0V 50% 0V 50% 50% 50% 90% VIN tD tD Test Circuit 5. Break-Before-Make Time Delay, tD VDD 0.1 F VDD 0.1 F S VDD SA SB D RL 50 GND CHANNEL-TO-CHANNEL CROSSTALK = 20 VS VOUT NC S GND D RL 50 VIN2 VOUT VIN1 VDD D 50 VS VIN IN LOG |VS /VOUT | Test Circuit 6. Off Isolation VDD 0.1 F Test Circuit 7. Channel-to-Channel Crosstalk VDD S D RL 50 GND VOUT VS VIN IN Test Circuit 8. Bandwidth REV. 0 -7- ADG736 OUTLINE DIMENSIONS Dimensions shown in inches and (mm). 10-Lead SOIC (RM-10) 0.122 (3.10) 0.114 (2.90) 10 6 0.122 (3.10) 0.114 (2.90) 1 5 0.199 (5.05) 0.187 (4.75) PIN 1 0.0197 (0.50) BSC 0.120 (3.05) 0.112 (2.85) 0.043 (1.10) MAX 0.028 (0.70) 0.016 (0.40) 0.120 (3.05) 0.112 (2.85) 0.037 (0.94) 0.031 (0.78) 6 0.006 (0.15) 0.012 (0.30) SEATING 0 PLANE 0.009 (0.23) 0.002 (0.05) 0.006 (0.15) 0.005 (0.13) -8- REV. 0 PRINTED IN U.S.A. C3384-8-10/98 |
Price & Availability of ADG736
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |